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DISCRETE SEMICONDUCTORS
DATA SHEET
BLT70 UHF power transistor
Product specification 1996 Feb 06
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Very high efficiency * Low supply voltage.
handbook, halfpage
BLT70
APPLICATIONS * Hand-held radio equipment in common emitter class-AB operation in the 900 MHz communication band.
4 c b
DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223H SMD package. PINNING - SOT223H PIN 1 2 3 4 SYMBOL e b e c base emitter collector Fig.1 Simplified outline and symbol. DESCRIPTION emitter
e 1
Top view
2
3
MAM043 - 1
QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter test circuit (see Fig.7). MODE OF OPERATION CW, class-AB f (MHz) 900 VCE (V) 4.8 PL (mW) 600 Gp (dB) 6 C (%) 60
1996 Feb 06
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Ts = 60 C; note 1 open base open collector CONDITIONS open emitter - - - - - -65 - MIN. 8 2.5 250 2.1 +150 175 MAX. 16
BLT70
UNIT V V V mA W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS Ptot = 2.1 W; Ts = 60 C; note 1 VALUE 55 UNIT K/W
Note to the "Limiting values" and "Thermal characteristics" 1. Ts is the temperature at the soldering point of the collector pin.
MGD197
handbook, halfpage
3
Ptot (W)
2
1
0 0 100 Ts (oC) 200
Fig.2 DC SOAR.
1996 Feb 06
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 0.5 mA open base; IC = 5 mA open collector; IE = 0.2 mA VCE = 7 V; VBE = 0 VCE = 4.8 V; IC = 100 mA VCB = 4.8 V; IE = ie = 0; f = 1 MHz VCE = 4.8 V; IC = 0; f = 1 MHz 8 2.5 - 25 - - MIN. 16 - - - 0.1 - 3.5 2.5 MAX.
BLT70
UNIT V V V mA pF pF
MGD198
MGD199
handbook, halfpage
100
handbook, halfpage
4
hFE 80
Cc (pF) 3
60 2 40
1 20
0 0 100 200 IC (mA) 300
0 0 4 8 12 VCB (V) 16
VCE = 4.8 V; Tj = 25 C.
IE = ie = 0; f = 1 MHz; Tj = 25 C.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Collector capacitance as a function of collector-base voltage; typical values.
1996 Feb 06
4
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Ts 60 C in a common emitter test circuit (see note 1 and Fig.7). MODE OF OPERATION CW, class-AB Note 1. Ts is the temperature at the soldering point of the collector pin. Ruggedness in class-AB operation f (MHz) 900 VCE (V) 4.8 ICQ (mA) 0.01 PL (W) 0.6 Gp (dB) 6 typ. 8.1
BLT70
C (%) 60 typ. 73
The BLT70 is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under the following conditions: f = 900 MHz; VCE = 6.5 V; PL = 0.5 W; Ts 60 C.
MGD200
MGD201
handbook, halfpage
10
Gp (dB)
Gp
100 C (%) 80
handbook, halfpage
1.0
PL (W)
8 C 6
0.8
60
0.6
4
40
0.4
2
20
0.2
0 0 0.2 0.4 0.6 0.8
0 1.0 PL (W)
0 0 100 PIN (mW) 200
f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts 60 C.
f = 900 MHz; VCE = 4.8 V; ICQ = 0.01 mA; Ts 60 C.
Fig.5
Power gain and collector efficiency as functions of load power; typical values.
Fig.6
Load power as a function of input power; typical values.
1996 Feb 06
5
Philips Semiconductors
Product specification
UHF power transistor
Test circuit information
BLT70
+Vbias
handbook, full pagewidth
+VS C11
R2
R1
L8
R3
C6
T1
C8 C9
L3 input 50 C1 C2 L1 C4 L2 C7 L4 L5
DUT L6
L7 L9 C10 L10 C12 C14 C13
MGD205
output 50
C3
C5
VS = Vbias = typ. 4.8 V.
Fig.7 Common emitter test circuit for class-AB operation at 900 MHz.
1996 Feb 06
6
Philips Semiconductors
Product specification
UHF power transistor
List of components used in test circuit (see Figs 7 and 8) COMPONENT C1, C6, C9, C14 C2 C4 C3, C5, C12, C13 C7 C8 C10 C11 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 R1 R2 R3 T1 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. DESCRIPTION multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer multilayer ceramic chip capacitor; note 1 tantalum capacitor multilayer ceramic chip capacitor; note 1 tantalum capacitor stripline; note 2 stripline; note 2 8 turns enamelled 0.8 mm copper wire stripline; note 2 stripline; note 2 stripline; note 2 8 turns enamelled 0.8 mm copper wire grade 3B Ferroxcube wideband HF choke stripline; note 2 stripline; note 2 metal film resistor metal film resistor metal film resistor NPN transistor 50 50 0.1 W, 15 0.1 W, 390 0.6 W, 10 BD139 length 12 mm width 5 mm length 28 mm width 5 mm VALUE 100 pF 1 pF 2.4 pF 1.4 to 5.5 pF 5.1 pF 1 F, 35 V 2.7 pF 100 F, 20 V 50 50 216 nH 50 50 50 105 nH length 29.1 mm width 5 mm length 21 mm width 5 mm length 7 mm internal dia. 4.5 mm length 1 mm width 5 mm length 3 mm width 2.5 mm length 12 mm width 5 mm length 7 mm internal dia. 3.4 mm DIMENSIONS
BLT70
CATALOGUE No.
2222 809 09004
4132 020 36640
2. The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (r = 2.2); thickness 116"; thickness of the copper sheet 2 x 35 m.
1996 Feb 06
7
Philips Semiconductors
Product specification
UHF power transistor
BLT70
handbook, full pagewidth
139
79
+VS +Vbias Copper foil R2 T1 R1 C2 C1 C3 L1 C5 C4 C6 L2 L4 L5 C7 L6 C10 L3 C9 L7 L9 L10 C12 C14 C13 R3 C8 L8 C11
Plated through holes
BLT70
MGD206
Dimensions in mm. The components are situated on one side of the copper-clad PCB, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.8 Printed-circuit board and component lay-out for 900 MHz class-AB test circuit in Fig.7.
1996 Feb 06
8
Philips Semiconductors
Product specification
UHF power transistor
BLT70
MGD202
MGD203
handbook, halfpage
20
Zi () 16 ri
handbook, halfpage Z
40 L () 30
RL
20 12 10 8 xi
0 XL
4
-10 -20 800
0 800
850
900
950
1000 f (MHz)
850
900
950
1000 f (MHz)
VCE = 4.8 V; ICQ = 0.01 mA; PL = 0.6 W; Ts 60 C.
VCE = 4.8 V; ICQ = 0.01 mA; PL = 0.6 W; Ts 60 C.
Fig.9
Input impedance as a function of frequency (series components); typical values.
Fig.10 Load impedance as a function of frequency (series components); typical values.
MGD204
handbook, halfpage
12
Gp (dB)
8
handbook, halfpage
4
Zi ZL
MBA451
0 800
850
900
950
f (MHz)
1000
VCE = 4.8 V; ICQ = 0.01 mA; PL = 0.6 W; Ts 60 C.
Fig.11 Power gain as a function of frequency; typical values.
Fig.12 Definition of transistor impedance.
1996 Feb 06
9
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE
BLT70
handbook, full pagewidth
0.95 0.85
S 0.32 0.24
seating plane 6.7 6.3 3.1 2.9
0.1 S
B 4
0.2 M A
A
0.10 0.01
3.7 3.3
o
7.3 6.7
16 o max
16
1 1.80 max 10 o max 2.3 4.6
2 0.80 0.60
3 0.1 M B (4x)
MSA035 - 1
Dimensions in mm.
Fig.13 SOT223H.
1996 Feb 06
10
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLT70
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Feb 06
11

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